A Novel Approach to Compact Model Parameter Extraction for Excimer Laser Annealed Complementary Thin Film Transistors
نویسندگان
چکیده
منابع مشابه
Effects of grain boundaries on performance and hot-carrier reliability of excimer-laser annealed polycrystalline silicon thin film transistors
Articles you may be interested in Anomalous hot-carrier-induced degradation of offset gated polycrystalline silicon thin-film transistors Appl. Reliability of laser-activated low-temperature polycrystalline silicon thin-film transistors Appl. Erratum: " Effect of excimer laser annealing on the structural and electrical properties of polycrystalline silicon thin-film transistors " [J. Effect of ...
متن کاملComplementary Organic Thin-Film Transistors on Glass
Organic thin-film transistors (OTFT) present a new approach to building electronics that can mechanically flex, span large areas, and integrate with polymeric materials. Potential applications include flexible displays, biochemical sensors, and artificial skin. In many applications, OTFTs act as an interface between the physical environment and the digital processors. Yet, a conspicuous absence...
متن کاملArF Excimer Laser Annealing of Polycrystalline Silicon Thin Film
Crystallization of amorphous silicon (a-Si) using excimer laser annealing (ELA) has been reported since 1994 by Watanabe group. It is known as the best method to fabricate a good poly-silicon because it can heat the film up to the melting point and, at the same time no thermal damage occur into the glass substrate (Carluccio et al., 1997; Matsumura and Oh, 1999). ELA technique is widely used to...
متن کاملn-Channel organic thin film transistors and complementary inverters
n-channel organic thin film transistors (OTFTs) with field-effect mobility comparable to that typically reported for pchannel pentacene TFTs were fabricated on oxidized silicon wafers using N,N'-ditridecylperylene-3,4,9,10tetracarboxylic diimide (PTCDI-C13H27) as the semiconductor. Au, Cr, Al, and LiF/Al source and drain contacts were studied. Accumulation mode n-channel transistor operation wa...
متن کاملA Maskless Laser-Write Lithography Processing of Thin-Film Transistors
We report on a fabrication method of the hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) using a maskless laser-write lithography (LWL). Level-to-level alignment with a high accuracy is demonstrated using LWL method. The obtained results show that it is possible to fabricate a-Si:H TFTs using a well-established a-Si:H TFT technology in combination with the maskless lithogra...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Computational Electronics
سال: 2004
ISSN: 1569-8025,1572-8137
DOI: 10.1007/s10825-004-7057-6